摘要
本文简述了用α-SiC:H/α-Si:H复合膜钝化硅平面器件的钝化机理,并成功地应用于硅平面小功率晶体管的表面钝化,实验表明,钝化后的器件反向漏电流降低了2～3个数量级;小注入下的电流放大系数提高了3～4倍;室温—200℃的BT实验表明,未钝化的器件200℃时的电流放大系数比室温时增加了300％,而钝化后的器件只增加了75％。这些结果主要归因于钝化膜中原子态氢在到达SiO_2-Si界面处与界面处悬挂键结合,降低了界面态密度。
The mechanism of the a-SiC:H/a-Si:H complex passivative film is described in brief. This film has been successful used in low-power silicon planer devices. After passivation, we get, two-to-three-orders-of-magnitude reduction in reverse leakage current, increase in low-level injection current gain evidently. Befor passivation, the current gain at 200℃ increase by 300％ over room temperature(27℃), but after passivation, it only increase by 75％.
出处
《山东大学学报（自然科学版）》
CSCD
1989年第1期44-48,共5页
Journal of Shandong University(Natural Science Edition)
关键词
非晶硅薄膜
钝化
钝化机理
amorphous silicon thin film, passivation, passivated mechanism
