摘要
在注入As的Si表面上,采用离子束溅射淀积Co/Ti双层金属膜。在氮气氛下对 Co/Ti/Si进行多步热处理,研究As原子在Co/Ti/Si三元固相反应过程中的行为。实验采用背散射技术测量As原子在反应各阶段中的分布。结果表明,随着反应形成TiN(O)/Co-Ti-Si/CoSi_2/Si多层薄膜结构,一部分Si衬底中的As原子被分凝出来,向表面运动,并聚集在Co-Ti-Si三元硅化物中。对As原子的这一再分布行为进行了讨论。
The bimetallic layers of Co/Ti were deposited by ion beam sputtering on silicon implanted with arsenic. The sample of Co/Ti/Si was treated by a multi-step annealing under nitrogen ambient. The behaviuor of arsenic during the reaction of ternary Co/Ti/Si system was studied by Rutherford backscattering sepctrometry (RBS). The results show that a multi-layer structure of TiN(O)/Co-Ti-Si/CoSi2/Si was formed by the reaction and a number of arsenic atoms were segregated from silicon substrate to the interlayer of Co-Ti-Si compound.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1993年第11期1800-1805,共6页
Acta Physica Sinica
关键词
固相反应
砷
分凝
硅化物
Chemical reactions
Interfaces (materials)
Segregation (metallography)
Semiconducting films
Spectroscopic analysis
