摘要
用X射线光电子谱研究了由等离子体增强化学气相沉积方法制备的富硅a SiNx∶H(x≤ 0 .80 )薄膜的结构。实验中选取两类典型样品 ,x分别为 0 2 8和 0 80。对Si 2 p峰用两个高斯峰来拟合 ,结果表明样品中确实存在分凝现象 ,是由a Si原子团和位于其边界的富氮a SiNy∶H组成 ,其中y约为 1 5。随N含量增加 ,两相所对应的Si2 p峰的位置和半高宽均不发生变化 ,但两相相对强度的变化导致了Si 2 p峰向高能方向移动。 75 0℃高温退火后 ,样品中发生结构重组 ,对x =0 .2 8的样品 ,H释放后形成的硅悬挂键与N结合 ,使a Si相所占比例从 5 8 9%下降到 46 3% ,而且键角畸变增加引起各峰半高宽大大展宽 ;对x =0 .80的样品 ,高温退火使两个Si—N—H结合形成两个Si—N键并释放出氢 ,因此无论是两相比例还是半高宽均无大的变化 ,相应的 y增至 2。
The electronic structures of Si rich hydrogenated silicon nitrides(a SiN x ∶H, x ≤0.80),grown by plasma enhanced chemical vapor deposition,were studied with X ray photoelectron spectroscopy. For the two typical samples with x =0.28 and 0.80,we used two Gaussians to deconvolute the Si 2 p peak.The results show that segregation was found to exist in Si rich a SiN x ∶H film and the film has heterogeneous structures consisting of intrinsic a Si and N rich a SiN y ∶H ( y is estimated to be 1.5).When x increases from 0.28 to 0.80,though the peak position and the width of these two phases remain unchanged,the marked changes in relative intensity of these two phases result in the shift of the total binding energy of Si 2 p .When annealed at 750 ℃ for 30 min,the bond configuration of a SiH x ∶H reconstructs. For low N content samples ( x =0.28),the Si dangling bonds resulted from H releasing may combine with N.As a result,intrinsic Si decreases form 58.9% to 46.3% and a bond angle distortion results in a peak broadening of the bonded Si 2 p and N 1 s bands.For high N content samples ( x =0.80),the ratio of the two phases and the full width at half ma ximun barely change and the average N atom number bounded to a Si atom in N rich region increases approximately to 2 because high temperature annealing turns two Si—N—H into two Si—N bonds and releases hydrogen.
出处
《真空科学与技术》
CSCD
北大核心
2000年第6期425-429,共5页
Vacuum Science and Technology
基金
国家自然科学基金青年基金资助项目(59702005)
关键词
X射线光电子谱
a-SiNx∶H薄膜
分凝
X-ray photoelectron spectroscopy
Amorphous silicon nitride films
Segregation
