摘要
综述近年国内外在CoSi2／Si异质外延生长技术领域的研究进展,在半导体衬底上异质外延具有优良导电特性的金属硅化物,从基础研究和技术发展两方面都具有重要价值。利用Co／Ti／Si多层薄膜固相反应实现CoSi2／Si异质外延,是近年取得重要进展的新方法。应用这种方法在（111）和（100）硅衬底上都可实现CoSi2外延生长,无需在超高真空下进行,与硅器件基本工艺相容性好,可形成自对准硅化物接触结构,对发展新器件制造技术有重要作用。在简要介绍分子束外延和离子合成CoSi2外延薄膜生长技术后,重点介绍和评述新型固相异质外延方法的工艺技术、机理和应用研究进展。
Due to the superior electrical property and thermal stability,CoSi2 has been applied as contact and interconnect material in ULSI devices. Heteroepitaxy of CoSi2 thin film on Si substrate has recently received extensive interest because of its importance both in basic research and its potential application. In this paper,various methods of heteroepitaxy of CoSi2 on Si substrate have been reviewed. Among these methods, the Co/Ti/Si multilayer solid phase epitaxy technology has received intensive study in recent years. It can result in an epitaxia1 growth of CoSi2 on both(111)and (100)Si substrates and has good compatibility with modern silicon device technology. The technology,mechanism and possible application of this novel multilayer solid phase epitaxy are discussed.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
1998年第4期449-461,共13页
Research & Progress of SSE
基金
国家自然科学基金!69776005
上海应用材料和发展基金
关键词
金属硅化物
异质外延
分子束外延
硅化钴
Metal Silicide
Hetero-epitaxy
Molecular Beam Epitaxy
Ion Beam Synthesis
Solid Phase Epitaxy
