摘要
采用等离子体增强化学气相沉积方法(PECVD),在低衬底温度下制备了富硅氮化硅薄膜。利用红外吸收谱(IR)、XPS光电子能谱和光致发光谱(PL),研究了不同的退火温度对薄膜结构和发光的影响。研究发现,薄膜经退火后,在发光谱中出现一强的发光峰。当经过900 ℃退火后,随着与硅悬键有关的发光峰的消失,该强的主发光峰发生了明显的蓝移,并且有所宽化。蓝移现象源于高温退火后,在薄膜中有小尺寸的 Si团簇形成。通过实验结果分析,提出薄膜的发光起因于包埋在氮化硅中的Si团簇。
The Si-rich silicon nitride films were prepared by plasma enhance chemical vapor deposition (PECVD) technique at low temperature. Infrared (IR), X-ray photoelectron spectroscopy and photoluminescence (PL) were used to study the influence of different annealing temperatures on the structural and optical properties of the films. After annealing, an intense PL peak appears in the PL spectra. With the disappearance of PL peak with respect to Si dangling bonds after annealing temperature of 900 ℃, the intense PL peak shows an obvious blueshift. Accompanying with the blueshift, the intense PL peak is broadened. The blueshift of the intense PL peak is attributed to the formation of the small Si clusters in the films. In terms of the results, the intense PL originates from the Si clusters embedded in the silicon nitride.
出处
《液晶与显示》
CAS
CSCD
北大核心
2005年第1期18-21,共4页
Chinese Journal of Liquid Crystals and Displays
基金
国家自然科学重点基金资助项目(No.60336020)
"863"高技术资助项目(No. 2001AA31112)
中科院创新工程资助项目
国家自然科学基金资助项目(No.60278031
60176003
60376009)
