摘要
在PECVD系统制备a－SiTFT矩阵工艺中采用氢射频等离子辉光放电产生的H，钝化SiNx表面的硅悬键，从而使a－So：H／SiNx界面态得到减小．由此制备出的a-SiTFT矩阵，其性能得到明显改善．
H produced during H2 RF discharge in the PECVD system is used to passivate Sidangling bonds at the surface of SiNx layer during preparation of a-Si TFT matrix. As aconsequence, the interface states of a-Si: H/SiNx are decreased and the performance ofa-Si TFT is improved.
基金
国家自然科学基金
关键词
开关器件
H处理
半导体器件
Amorphous films
Hydrogen
Liquid crystals
Passivation
