摘要
对于Ａｕ／富ＳｉＳｉＯ２／ｐＳｉ和Ａｕ／富ＳｉＳｉＯ２／ｎ＋Ｓｉ这两种结构，研究并比较了它们的电致发光特性．对于前者，当正向偏压大于４Ｖ时发射红光，而加反向偏压时不发光；对于后者，加正向偏压不发光，而当反向偏压大于３．５Ｖ时发射红光．
The structures of Au/Si rich SiO 2/p Si and Au/Si rich SiO 2/n + Si have been fabricated and their electroluminescence characteristics have comparatively been studied. For the Au/Si rich SiO 2/p Si structure, when the forward bias is more than 4V, red light is emitted, while under the reverse bias, no light is observed. For Au/Si rich SiO 2/n + Si structure, it does not emit light under the forward bias, but it emits red light when the reverse bias is greater than 3.5V. The mechanism for electroluminescence from the Au/Si rich SiO 2/n + Si structure is disscussed.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1997年第5期1011-1014,共4页
Acta Physica Sinica
