摘要
为研究氮化硅薄膜发光材料的制备工艺及其光致发光机制,实验采用射频磁控反应溅射技术与热退火处理制备了纳米硅镶嵌氮化硅薄膜材料。利用红外光谱(IR)、X射线衍射谱(XRD)、能谱(EDS)和光致发光谱(PL),对不同工艺条件下薄膜样品的成分、结构和发光特性进行研究,发现在制备的富硅氮化硅薄膜材料中形成了纳米硅颗粒,并计算出其平均尺寸。在510 nm光激发下,观察到纳米硅发光峰,对样品发光机制进行了讨论,认为其较强的发光起因于缺陷态和纳米硅发光。
In order to study preparation process and PL mechanism of silicon nitride thin films, the nc-Si （nanocrystalline Si ） embedded in silicon nitride thin films were prepared sputtering technique and thermal annealing. Comparison with these films prepared by by RF magnetron reaction different process recipes such as sputtering gas pressures and annealed temperatures, IR, XRD, EDS and PL technologies were used to study the composition, structure and the luminescent properties. The results showed that the films were embedded with nc-Si particles. Under 510 nm wavelength light excitation, several room-temperature emission bands were observed in the PL spectra. The PL origins of these emission bands were discussed. The intense PL was proposed to originate from the defects and nc-Si embedded in silicon nitride film.
出处
《半导体技术》
CAS
CSCD
北大核心
2007年第9期820-823,共4页
Semiconductor Technology
基金
国家自然科学基金(60678053)
国家自然科学基金重点资助项目(60336010)
关键词
射频磁控反应溅射
氮化硅薄膜
纳米硅
光致发光
RF magnetron reaction sputtering
silicon nitride thin film
nc-Si
photoluminescence （PL）
