摘要
利用透射电子显微镜(TEM)观测a-Si:H 薄膜在不同温度下生长的分形结构。实验方法为原位动态技术。对分形结构的TEM形貌像用Sandbox方法计算了其分形维数。450℃时,形成具有类似分叉状的分形结构,分形线数d_f=1.69;800℃时,形成岛状分形结构,分形维数d_f=1.76。实验结果表明,分形结构的形成与薄膜物性的变化相联系。文中还对分形结构与a =Si:H 薄膜晶化的关系进行了讨论。
Fractal structure morphology of hydrogenated amorphous silicon films at different temperaturesis observed by transmission electron microscope(TEM). The experiment method is dynamicin situ technique. The fractal dimensions are calculated by sandbox method. At 450℃,the fractal structures with fingering-like are grown in thin films, the fractal dimensions is 1.69.At 800℃, the fractal structures with island-like are grown in thin films, and the fractal dimensionsis 1.76. The experimental results show that the fractal structures in a-Si:H films arein close relationship with the characterization of a-Si:H films.The relationship between thefractal structures in a-Si:H films and crystallization of a-Si:H films are also discussed.
关键词
非晶硅
薄膜
晶化
分形结构
Fractal structure
Fractal dimension
Amorphous silicon
Thin film
Crystallization
Dynamic method
