摘要
利用俄歇电子能谱、深能级瞬态谱、及I—V和C—V两种电学测量方法对PtSi/N-Si和PtSi/P-Si两种肖特基势垒的形成条件与势垒高度之间的关系进行了详细研究。从理论上分析了在退火过程中引入的影响肖特基势垒特性的各种因素,同时指出了获得理想肖特基势垒的退火条件。
Electrical measurements (DLTS, I-V and C-V) were combined with Auger Electron Spectroscopy (AES) to study the relation between the formation conditions of silicides and Schottky barrier heights. The mechanism of the barrier height depending on the distribution of defects/impurities produced during annealing, and the best annealing condition to form the ideal Schottky barrier of Pt silicides/Si are discussed in the present paper in detail.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
1993年第5期392-396,共5页
Journal of Infrared and Millimeter Waves
基金
国家自然科学基金~~
关键词
硅化物
肖特基势垒
铂
退火
silicide/silicon interface, Schottky barrier, deep level.
