摘要
计算机模拟表明,对于常规的光生电流瞬态谱,如果样品中两个深能级缺陷的信号因位置接近而互相迭加,则在确定这些缺陷的参数时会由于率窗的选取不当而引进很大的误差.为此本文提出了用计算机进行数据采集及处理的高分辨率光生电流瞬态谱HR-PICTS(High Resolution Photo-Incluced Current Transient Spectroscopy).它能分辨出原已不能分辨的信号峰,并使得到的深能级缺陷参数更为准确.此法设备简单、操作方便,只需一次温度扫描就可获得深能级缺陷的各种参数.对半绝缘GaAs的实验结果表明,HR-PICTS为研究半绝缘材料中的深能级缺陷提供了更有力的工具.
Using computer simulation, it is shown that in usual PICTS, if more than two defect levels are present in a sample and those PICTS signals are closely superposed on each other, large errors will be introduced into the obtained perameters of defects with using insuitable rate windows. In this paper, a high resolution photo-induced current transient spectroscopy technique using a computer for data acquisition and processing is presented. Due to its high resolution, it enables one to distinguish two closely spectrum-peaks which doesn't in usual PICTS and to get more reliable parameters of defects. By using the computer which can get a large number of sampling gates for transient signal and change the sampling function, the high resolution photo-induced current transient spectroscopy can be got and the parameters of defects can be obtained with only a single thermal scanning process. The experimental results obtained in the SIGaAs have been found that HR-PICTS is more powerful tool for study deep levels in the semi-insulating semiconductor material.
出处
《复旦学报（自然科学版）》
CAS
CSCD
北大核心
1992年第2期175-183,共9页
Journal of Fudan University：Natural Science
基金
国家自然科学基金
关键词
计算机控制
深能级
PICTS
半导体
defects
gallium arsenide
computer control
photo-induced current transient spectroscopy
deep level
semi-insulating gallium arsenide.
