摘要
采用磁控溅射方法在p-Si(111)衬底上淀积5nmPt膜,分别在350℃～600℃退火。原子力显微镜(AFM)观察和X射线光电子谱(XPS)分析表明,随退火温度的增加,平坦的薄膜表面变得粗糙,其相分布由Pt-Pt2Si-PtSi变为Pt+Pt2Si+PtSi-PtSi。
The 5 nm Pt films were deposited on p-Si(111) by magnetron sputtering and annealed at 350degreesC similar to 600degreesC. Their structures were characterized by AFM and XPS. The results show that with the increase of annealing temperature, the flat surface of the films becomes coarse and columnar, and the distribution order of phases in the films is changed from Pt-Pt2Si-PtSi to Pt + Pt2Si + PtSi-PtSi.
出处
《稀有金属材料与工程》
SCIE
EI
CAS
CSCD
北大核心
2003年第9期707-710,共4页
Rare Metal Materials and Engineering
