摘要
本文用加栅的光电流瞬态谱(PICTS)方法研究了半绝缘砷化镓材料中的深能级缺陷,发现加栅后可使PICTS对EL2等靠近禁带中央的缺陷变得灵敏,并分析了其中原因,认为材料中费米能级位置对PICTS结果有影响。
Gated-photo induced transient spectroscopy (PICTS) has been used to study the deeplevel defects in SI-GaAs material. In many cases, it is found that the gated PICTS can bemore sensitive to those mid-gap defects (such as EL2) than the traditional PICTS. And weattribute this effect to the Fermi level shift near the surface after the metal deposition.
基金
国家自然科学基金
