摘要
采用x—射线衍射(XRD)、高能电子衍射(RHEED)、扫描电子显微镜(SEM)和紫外可见吸收谱(UV)等技术研究了在汞灯(ML)辅助下进行有机金属化学气相沉积(MOCVD)所得本征及掺杂SnO_2薄层晶体的结构和透明导电性。实验指出,采用汞灯辅助有机金属化学气相沉积(ML-MOCVD)SnO_2薄层晶体比无汞灯辅助的有机金属化学气相沉积(MOCVD)膜层生长速度快,结晶粒度大且其透明导电性能更好。本文对ML-MOCVD SnO_2薄层晶体的结晶粒度与生长温度的关系、掺杂对结晶取向的影响以及可见光透过率、导电性能等进行了较详细的研究。结果指出,ML-MOCVD是获得透明导电优质薄层SnO_2晶体材料的最佳途径。
Structure and transparent con- ductive property of thin crystalline undoped and doped stannic Oxide are described by the X-ray diffraction(XRD)、scan- ning eleetron microscopy(SEM),high energy electron diffraction(RHEED)and ultravioled visible absorption(UV)spe- ctral. These film layers grown by mercury- lamp assisted metallorganic chemical va- pour deposition(ML-MOCVD)possessed far better structure and transparent con- ductive property than by MOCVD and other methods.Experiment showed the relationship between the crystalline grain of stannic oxide polycrystal film and its temperature of growth.The crystal orien- tation changed under the influence of the doping.Highly transparent conducti- ve thin layer crystalline of stannic oxi- de has keen prepared by ML-MOCVD.
出处
《功能材料》
EI
CAS
CSCD
1993年第2期129-133,共5页
Journal of Functional Materials
基金
国家自然科学基金资助课题
关键词
汞灯
薄层晶体
二氧化锡
气相沉积
thin layer crystal stannic oxide metallorganic chemical vapor deposition(MOCVD)
