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透明导电半导体ZnO膜的研究 被引量:7

THE RESEARCH ON THE TRANSPARENT AND CONDUCTIVE SEMI CONDUCTOR ZNO THIN FILM
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摘要 本文采用独特的电子束蒸镀方法,在光学镀膜机上,以 ZnO+3%Al2O3和 ZnO为膜料.k9光学玻璃为衬底,制备出ZnO 膜。膜层为多晶膜,可见光透过率为T=70-90%,电阻率p=1×10-5Ω·m,方电阻为 R =150±50±50Ω/ ,膜机械强度超过国标单层标准,找到实用最佳工艺条件。 This paper described that the ZnO film have been prepared by electron gun evaporation. As the film material, ZnO + 3% Al203 was doped into ZnO film. Under differe,it process condition, polycrystal structure of the ZnO films were obtained. Transmittance(visible range)T = 70 -90%, resistivity p =1x 10-5Ω/ , square resistance R =150±50Ω/ . The mechanical strength of sample films were super than the national single film standard. The best process condition has found.
出处 《应用光学》 CAS CSCD 2002年第2期35-38,共4页 Journal of Applied Optics
关键词 ZnO膜 透明导电性 电子束蒸镀方法 透明导电氧化物半导体薄膜 氧化锌薄膜 thin film ZnO semi -conductor transparent and conductive
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