摘要
用无水ＳｎＣｌ＿４和ＳｎＣｌ＿４·５Ｈ＿２Ｏ为原料，用热喷涂法制备ＳｎＯ＿２薄膜，在基片温度为５３０℃时，对所制得ＳｎＯ＿２薄膜进行Ｘ－射线、ＳＥＭ分析，并对其光电性质进行测定。总结出含Ｈ＿２Ｏ的ＳｎＣｌ＿４制得的ＳｎＯ＿２薄膜生长速度快，电阻率低。
Thin oxide(SnO_2)thin films wereprepared by spray pyrolysis using anhydrous andpertahydrate tin chloride as starting material.Thefilms we re analyzed by X-ray diffraction and SEM,and their electrical and optical properties weremeasuredas a function of substrate temperature(530℃).The growth rate of SnO_2 films preparedfrom SnCl_4·5H_2O was higher than that of thoseprepared from anhydrous SnCl_4.The resistivity ofSnO_2 films prepared from SnCl_4·5H_2O was lowerthan that of those prepared from anhydrous SnCl_4.
出处
《功能材料》
EI
CAS
CSCD
1995年第6期502-504,共3页
Journal of Functional Materials
关键词
薄膜
透明导电膜
四氯化锡
二氧化锡
SnO_2 thin films,transparentelectroconductive films.tin chloride
