A new super-junction lateral double diffused MOSFET （LDMOST） structure is designed with n-type charge compensation layer embedded in the p^--substrate near the drain to suppress substrate-assisted depletion effect t...A new super-junction lateral double diffused MOSFET （LDMOST） structure is designed with n-type charge compensation layer embedded in the p^--substrate near the drain to suppress substrate-assisted depletion effect that results from the compensating charges imbalance between the pillars in the n-type buried layer. A high electric field peak is introduced in the surface by the pn junction between the p^--substrate and n-type buried layer, which given rise to a more uniform surface electric field distribution by modulation effect. The effect of reduced bulk field （REBULF） is introduced to improve the vertical breakdown voltage by reducing the high bulk electric field around the drain, The new structure features high breakdown voltage, low on-resistance and charges balance in the drift region due to n-type buried layer.展开更多
A new LDMOST structure, named B-LDMOST that has a buried layer under the drain is proposed. The buried layer is not connected to the drift region, so it can optimize the vertical field distribution and increase breakd...A new LDMOST structure, named B-LDMOST that has a buried layer under the drain is proposed. The buried layer is not connected to the drift region, so it can optimize the vertical field distribution and increase breakdown voltage. The analysis and the simulated results show that B-LDMOST can increase breakdown voltage, with almost negligible influence on the other parameters such as on-resistance, switching time, and so on.展开更多
In this paper, we propose a novel low on-resistance Super Junction （S J） Lateral Double-diffusion MOSFET （LDMOST） which has split p column structures with rated voltage of 60-100V. The key feature of this new stru...In this paper, we propose a novel low on-resistance Super Junction （S J） Lateral Double-diffusion MOSFET （LDMOST） which has split p column structures with rated voltage of 60-100V. The key feature of this new structure is that the split p column super junction primarily provides the low on-resistance path and it just locates at the surface of the drift region rather than the entire drift region. The manufacturing process of the device is relatively simple and is compatible with the Bi-CMOS process. Three dimension device simulations indicate that this structure can achieve a low specific on-resistance of 11.5 mΩ·cm^2 at a gate voltage of 5 V compared with 27.7 mΩ·cm^2 for the conventional LDMOST at the breakdown voltage of 80V.展开更多
A lateral double-diffused metal-oxide-semiconductor field effect transistor （LDMOST） with multiple n-regions in the p-substrate is investigated in detail. Because of the decrescent n-regions, the electric field dist...A lateral double-diffused metal-oxide-semiconductor field effect transistor （LDMOST） with multiple n-regions in the p-substrate is investigated in detail. Because of the decrescent n-regions, the electric field distribu- tion is higher and more uniform, and the breakdown voltage of the new structure is increased by 95%, in comparison with that of a conventional counterpart without substrate n-regions. Based on the trade-off between the breakdown voltage and the on-resistance, the optimal number of n-regions and the other key parameters are achieved. Furthermore, sensitivity research shows that the breakdown voltage is relatively sensitive to the drift region doping and the n-regions＇ lengths.展开更多
An SOI trench LDMOST（TLDMOST）with ultra-low specific on-resistanceis proposed.It features double vertical high-k insulator pillars（Hk1 and Hk2）in the oxide trench,which are connected to the source electrode and dr...An SOI trench LDMOST（TLDMOST）with ultra-low specific on-resistanceis proposed.It features double vertical high-k insulator pillars（Hk1 and Hk2）in the oxide trench,which are connected to the source electrode and drain electrode,respectively.Firstly,under reverse bias voltage,most electric displacement lines produced by the charges of the depleted drift region in the source side go through the Hk1,and thus the average electric field strength under the source can be enhanced.Secondly,two additional electric field peaks are induced by the Hk_1,which further modulate the electric field in the drift region under the source.Thirdly,most electric displacement lines produced by the charges of the depleted drift region in the drain side enter into the Hk2.This not only introduces one more electric field peak at the corner of the oxide trench around the Hk2,but also forms the enhanced vertical reduced surface field effect,which modulates the electric field in the drift region under the drain.With the effects of the two Hk insulator pillars,the breakdown voltage（BV）and the drift region doping concentration are significantly improved.The simulation results indicate that compared with the oxide trench LDMOST（previous TLDMOST）with the same geometry,the proposed double Hk TLDMOST enhances the BV by 86%and reduces theby 88%.展开更多
This paper presents an improved analytical model for an RF-LDMOST structure based on the 2D Poisson equation. The derived model indicates the influence of high doped shallow drift and low doping concentration p epitax...This paper presents an improved analytical model for an RF-LDMOST structure based on the 2D Poisson equation. The derived model indicates the influence of high doped shallow drift and low doping concentration p epitaxial layer on the electric field distribution. In particular, the importance of the thickness of the p epitaxial layer for electric field distributions in RF-LDMOST are shown through MATLAB analytical results based on the model. Then ISE TCAD simulations and experiments are processed and their results are in agreement with the analytical model. This model contributes to the comprehension and optimization design of RF-LDMOST.展开更多
A new super junction LDMOST structure that suppresses the substrate-assisted depletion effect is designed with an n^＋-floating layer embedded in the high-resistance p-type substrate by implanting phosphor or arsenic....A new super junction LDMOST structure that suppresses the substrate-assisted depletion effect is designed with an n^＋-floating layer embedded in the high-resistance p-type substrate by implanting phosphor or arsenic. This effect results from a charge imbalance between the n-type and p-type pillars when the n-type pillars are depleted by p-type substrate. The high electric field around the drain is reduced by the n^＋-floating layer due to the REBULF effect,which causes the redistribution of the bulk electric field in the drift region,and thus the substrate supports more biases. The new structure features high breakdown voltage, low on-resistance,and charge balance in the drift region.展开更多
基金Project supported by the National Natural Science Foundation of China （Grant No 60436030） and the Key Laboratory for Defence Science and Technology on Military Simulation Integrated Circuits （Grant No 9140C0903010604）.
文摘A new super-junction lateral double diffused MOSFET （LDMOST） structure is designed with n-type charge compensation layer embedded in the p^--substrate near the drain to suppress substrate-assisted depletion effect that results from the compensating charges imbalance between the pillars in the n-type buried layer. A high electric field peak is introduced in the surface by the pn junction between the p^--substrate and n-type buried layer, which given rise to a more uniform surface electric field distribution by modulation effect. The effect of reduced bulk field （REBULF） is introduced to improve the vertical breakdown voltage by reducing the high bulk electric field around the drain, The new structure features high breakdown voltage, low on-resistance and charges balance in the drift region due to n-type buried layer.
基金Supported by the National Natural Science Foundation of China(No.69776041)
文摘A new LDMOST structure, named B-LDMOST that has a buried layer under the drain is proposed. The buried layer is not connected to the drift region, so it can optimize the vertical field distribution and increase breakdown voltage. The analysis and the simulated results show that B-LDMOST can increase breakdown voltage, with almost negligible influence on the other parameters such as on-resistance, switching time, and so on.
基金Supported by National Natural Science Foundation of China. (No. 60576052) and The Key Program Project of National Science Foundation of China. (No. 60436030)
文摘In this paper, we propose a novel low on-resistance Super Junction （S J） Lateral Double-diffusion MOSFET （LDMOST） which has split p column structures with rated voltage of 60-100V. The key feature of this new structure is that the split p column super junction primarily provides the low on-resistance path and it just locates at the surface of the drift region rather than the entire drift region. The manufacturing process of the device is relatively simple and is compatible with the Bi-CMOS process. Three dimension device simulations indicate that this structure can achieve a low specific on-resistance of 11.5 mΩ·cm^2 at a gate voltage of 5 V compared with 27.7 mΩ·cm^2 for the conventional LDMOST at the breakdown voltage of 80V.
基金supported by the National Natural Science Foundation of China(No.61274080)the Natural Science Foundation of Jiangsu Province(No.BK2011753)the Postdoctoral Science Foundation of China(No.2013M541585)
文摘A lateral double-diffused metal-oxide-semiconductor field effect transistor （LDMOST） with multiple n-regions in the p-substrate is investigated in detail. Because of the decrescent n-regions, the electric field distribu- tion is higher and more uniform, and the breakdown voltage of the new structure is increased by 95%, in comparison with that of a conventional counterpart without substrate n-regions. Based on the trade-off between the breakdown voltage and the on-resistance, the optimal number of n-regions and the other key parameters are achieved. Furthermore, sensitivity research shows that the breakdown voltage is relatively sensitive to the drift region doping and the n-regions＇ lengths.
基金supported by the National Natural Science Foundation of China(Nos.51237001,51607026)the Fundamental Research Funds for the Central Universities(No.ZYGX2016J048)
文摘An SOI trench LDMOST（TLDMOST）with ultra-low specific on-resistanceis proposed.It features double vertical high-k insulator pillars（Hk1 and Hk2）in the oxide trench,which are connected to the source electrode and drain electrode,respectively.Firstly,under reverse bias voltage,most electric displacement lines produced by the charges of the depleted drift region in the source side go through the Hk1,and thus the average electric field strength under the source can be enhanced.Secondly,two additional electric field peaks are induced by the Hk_1,which further modulate the electric field in the drift region under the source.Thirdly,most electric displacement lines produced by the charges of the depleted drift region in the drain side enter into the Hk2.This not only introduces one more electric field peak at the corner of the oxide trench around the Hk2,but also forms the enhanced vertical reduced surface field effect,which modulates the electric field in the drift region under the drain.With the effects of the two Hk insulator pillars,the breakdown voltage（BV）and the drift region doping concentration are significantly improved.The simulation results indicate that compared with the oxide trench LDMOST（previous TLDMOST）with the same geometry,the proposed double Hk TLDMOST enhances the BV by 86%and reduces theby 88%.
文摘This paper presents an improved analytical model for an RF-LDMOST structure based on the 2D Poisson equation. The derived model indicates the influence of high doped shallow drift and low doping concentration p epitaxial layer on the electric field distribution. In particular, the importance of the thickness of the p epitaxial layer for electric field distributions in RF-LDMOST are shown through MATLAB analytical results based on the model. Then ISE TCAD simulations and experiments are processed and their results are in agreement with the analytical model. This model contributes to the comprehension and optimization design of RF-LDMOST.
文摘A new super junction LDMOST structure that suppresses the substrate-assisted depletion effect is designed with an n^＋-floating layer embedded in the high-resistance p-type substrate by implanting phosphor or arsenic. This effect results from a charge imbalance between the n-type and p-type pillars when the n-type pillars are depleted by p-type substrate. The high electric field around the drain is reduced by the n^＋-floating layer due to the REBULF effect,which causes the redistribution of the bulk electric field in the drift region,and thus the substrate supports more biases. The new structure features high breakdown voltage, low on-resistance,and charge balance in the drift region.
