摘要
报道了利用直流反应磁控溅射以Al,N共掺杂技术生长p型ZnO薄膜 .ZnO薄膜在不同衬底温度下沉积于α Al2 O3 (0 0 0 1)衬底上 ,N来自NH3 与O2 的生长气氛 ,Al来自ZnxAl1-x(x =0 9)靶材 .利用XRD ,AFM ,Hall,SIMS和透射光谱对其性能进行了研究 .结果表明 ,ZnO薄膜具有高度c轴择优取向 ,4 5 0℃、6 0 0℃分别实现了p型转变 ,电阻率为 10 2 ～ 10 3 Ω·cm ,载流子浓度为 10 15～ 10 16cm-3 ,迁移率为 0 5～ 1 32cm2 / (V·s) .薄膜中Al原子促进了N原子的掺入 .实验还表明 ,p ZnO薄膜在可见光区域具有很高的透射率 (约为 90 % ) ,室温下光学带宽为 3 2 8eV .而在 4 5 0℃生长的p
The p-type ZnO films with c -axis orientation are fabricated using Al and N codoping method by DC reactive magnetron sputtering.ZnO films are prepared on α-Al 2O 3(0001) substrate with different temperature.N acceptor comes from NH 3 and O 2 atmosphere,and Al donor dopant from Zn x Al 1-x ( x =0.9) targets.The properties are examined by X-ray diffraction(XRD),atomic force microscopy(AFM),second ion mass spectroscopy(SIMS),Hall measurement,and transmission spectra.The results show that the Al and N codoping ZnO films can be realized at 450℃,600℃ with a p-type conduction ,such as resistivity of 10 2～10 3Ω·cm,carrier density of 10 15 ～10 16 cm -3 Hall mobility of 0.5～1.32cm 2/(V·s).The presence of donor(Al) enhances N incorporation.The p-ZnO films have a transmittance about 90% in visible region and a band gap of 3.28eV at room temperature.The p-ZnO film obtained at 450℃ possesses a smaller size of grain and smoother surface.
基金
国家重点基础研究专项经费 (批准号 :G2 0 0 0 0 683 0 6)
国家自然科学基金(批准号 :90 2 0 10 3 8)资助项目~~
