摘要
通过使用分子束外延（ＭＢＥ）生长技术在ＰｔＳｉ／Ｓｉ界面上加进一足够薄的高掺杂浓度峰（Ｐ＋），可使ＰｔＳｉ肖特基红外探测器的截止波长延伸至长波红外范围。而且通过改变Ｐ＋峰的掺杂浓度可将截止波长调节到所需的波长范围。
It is described in this paper that the cut-off wave length of PtSi Schottky infrared detector can be extended to long wave-length infrared region by doping process of setting a thin spike with high doping concentration. The cut-off wavelength can be set to desired value while the doping concentration of the P+ spike is varied.
出处
《红外与激光工程》
EI
CSCD
1996年第6期39-41,共3页
Infrared and Laser Engineering
关键词
肖特基势垒器件
分子束外延
红外探测器
Subject Schottky barrier device Molecular beam epitaxial Modulation doping
