摘要
采用湿法工艺在还原气氛下制备了CaS∶Eu2+,Sm3+光存储材料。研究了灼烧温度和灼烧时间对样品性能的影响。XRD图谱表明,样品在700℃—1200℃均形成CaS晶格。光谱分析表明,在紫外光(295nm)激发后,用980nm半导体激光照射样品,具有光激励发光现象,发射光谱峰值波长为649nm。
The CaS∶Eu^(2+), Sm^(3+) powders are prepared by the wet-method in a reducing atmosphere. The influences on properties of sample from temperature and fired-time are studied. XRD analysis shows crystal structure of CaS is formed at 700℃. Spectrum analysis results show that the sample which is stimulated by 980nm laser after excitated by ultraviolet lamp (295nm ) emits red luminescence which peaking at 649nm.
出处
《光学技术》
CAS
CSCD
2004年第3期296-298,共3页
Optical Technique
