摘要
介绍自制溅射型负离子源及其关键部件——电离器的材料、结构、制作及使用情况。得到碳束C^-总流强>780μA,硅束Si-250μA.此电离器先后在2×1.7MV串列加速器的进口溅射源及200kV离子注入机自制溅射源上使用,寿命3000h。
A modified sputter negative ion source has been developed in Ion Beam Lab., Institute of Physics, the ionizer of which is described in detail. 780μA C- and 250μA of Si- have been obtained. The lifetime of the ionizer is longer than 3000 h.
出处
《核技术》
CAS
CSCD
北大核心
1992年第6期376-380,共5页
Nuclear Techniques
关键词
溅射负离子源
电离器
钽同轴线
离子源
Sputter negative ion source Ionizer Tantalum coaxial line
