摘要
一台用于超灵敏质谱(AMS)的带有多靶机构的强流溅射负离子源已经研制完成。为了满足AMS的特殊要求,源的设计着重解决提高流强、降低记忆效应及改善发射度等方面的问题,并且十分注意确保其性能的可靠性与稳定性。样机在试验台架上进行了一年多的调试并进一步作了改进。迄今已引出了10μA BeO^-、5μA Al^-、4.5μA Fe^-、350μA C^-以及其他十余个离子品种。100μA以下测得的归一化发射度约为2-4π mm·mrad·MeV^(1/2)。对记忆效应与电离效率也进行了初步测定。
The development of a high intensity Cs sputter negative ion source with multi-sample mechanism for AMS applications has been completed. In order to meet the particular requirements of AMS the source was specially designed with the emphasis on high output, low memory effect, low emittance as well as reliability and stability in structure and performance. The source prototype has been tested intensively on the test stand for more than one year. During the period some important modifications were made. 10μA BeO-, 5μAAl-, 4.5M Fe-, 350μA C- etc. have been delivered. The emittance was measured to be very good and ranges from 2 to 4πmm. mrad-MeV1/2 for beams less than 100μA. The memory effect and ionization efficiency have also been measured or evaluated. The first two source prototypes will be moved to the EN tandem at Peking University, Beijing, and the 6 MV home-made tandem in our Institute for 14C and 10Be measurements respectively.
出处
《核技术》
CAS
CSCD
北大核心
1992年第6期365-370,共6页
Nuclear Techniques
基金
国家自然科学基金会
中国科学院数理学部
