摘要
对B+注入的n on p平面结和分子束外延 (MBE)技术原位铟掺杂的n+ n p台面异质结的碲镉汞 (HgCdTe)长波光伏探测器暗电流进行了对比分析 .与n on p平面结器件相比 ,原位掺杂的n+ n p台面异质结器件得到较高的零偏动态阻抗 面积值 (R0 A) .通过与实验数据拟合 ,从理论上计算了这两种结构的器件在不同温度下的R0 A和在不同偏压下的暗电流 。
The dark current mechanism of B (+) -implanted n-on-p planar photodiode and Indium doped n (+) -n-p hetero-junction mesa photodiode formed in-situ by molecular beam epitaxy for Mercury-Cadmium-Telluride long-wavelength detector was compared and analyzed. It was found that n (+) -n-p hetero-juction-mesa photodiode doped in-situ had higher zero-bias resistance-area product (R(0)A) than n-on-p planar photodiode in our experiment. By fitting with experimental data, ROA at different temperature and the dark current at different bias voltage of the two long-wavelength devices were calculated theoretically, and some correlated parameters were also achieved.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
2004年第2期86-90,共5页
Journal of Infrared and Millimeter Waves
基金
中国科学院知识创新工程资助项目
