摘要
报道了用 MBE方法生长掺 In N型 Hg Cd Te材料的研究结果。发现 In作为 N型施主在 Hg Cd Te中的电学激活率接近 1 0 0 % ,其施主电离激活能至少小于 0 .6me V。确认了在制备红外焦平面探测器时有必要将掺杂浓度控制在约 3× 1 0 1 5cm- 3水平。比较了高温退火前后 In在 Hg Cd Te中的扩散行为 ,得出在 40 0°C温度下 In的扩散系数约为 1 0 - 1 4cm2 / sec,确认了 In原子作为 Hg Cd Te材料的
The results of indium doping in MBE grown HgCdTe are described. It was found that the indium electrical activation was close to be 100% in HgCdTe, the donor activation energy was at least small than 0.6 meV. It was confirmed that for infrared FPAs applications, a donor concentration of about 3 × 1015 cm-3 should be necessarily controlled by intention. The diffusion behavior of indium was studied by thermal annealing, and a diffusion coefficient of about 10-14 cm2/sec at 400°C was obtained, which confirms the feasibility and validity of indium as an n-type dopant in HgCdTe.
出处
《固体电子学研究与进展》
EI
CAS
CSCD
北大核心
2002年第2期210-214,共5页
Research & Progress of SSE
基金
中国科学院知识创新工程资助项目 (编号 :KGCXI-Y-0 5 )
