摘要
In this paper,indium doped SnO2 nanorods and nanowires have been prepared by the molten salt method,and the effects of indium doping concentration on the morphology and electrical properties of one-dimensional(1D) SnO2 nanostructures have been studied.It is found that indium doping concentration can affect the epitaxial growth,morphology and the electrical conductance of 1D SnO2 nanostructures.It is also found that the element made by using 6 mol% indium doped SnO2 nanorods responds to nitrogen gas.
In this paper, indium doped SnO2 nanorods and nanowires have been prepared by the molten salt method, and the effects of in- dium doping concentration on the morphology and electrical properties of one-dimensional （1D） SnO2 nanostructures have been studied. It is found that indium doping concentration can affect the epitaxial growth, morphology and the electrical con- ductance of 1D SnO2 nanostructures. It is also found that the element made by using 6 mol% indium doped SnO2 nanorods re- sponds to nitrogen gas.
基金
support from the Scientific Research Foundation for Young Talents of Fuzhou University (Grant No. 0041826483)
Research Foundation for the Doctor of Guangdong Pharmaceutical University(Grant No. 2007YKX15)
Research Foundation for the Excellent Yong Teacher of Guangdong Pharmaceutical University
