摘要
报道了一种适用于碲镉汞长波光伏探测器的由典型电阻电压(R-V)曲线提取器件基本特征参数的数据处理途径.拟合程序中采用的暗电流机制包括了扩散电流机制,产生复合电流机制,陷阱辅助隧穿机制以及带到带直接隧穿电流机制.本文详细地给出了该拟合计算所采用的方法和途径,分析了拟合参数的误差范围.通过对实际器件的R-V特性曲线的拟合计算,给出了实际器件的基本特征参数,验证了该数据处理途径的实用性.
An data-processing method was developed to obtain the device parameters from the resistance-voltage （R-V） characteristics measured in long-wavelength HgCdTe photodiode. This curve-fitting model includes the diffusion, generation-recombination, trap-assisted tunneling, and band-to-band tunneling current as dark current mechanisms. The fitting procedure was presented in details and the extents of the fitting errors were discussed. By fitting the R-V characteristics of a real device, the applicability of our method has been proved for obtaining the basic parameters of devices.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
2007年第2期92-96,共5页
Journal of Infrared and Millimeter Waves
基金
国家重点基础研究专项基金(2004CB619004
2001CB309302)
国家自然科学基金(60476031
10234040
60244002)资助项目
