摘要
采用离子束溅射镀膜和氧化工艺在Si(110 )和石英衬底上制备了用于非致冷红外探测器阵列热敏材料的混合相氧化钒多晶薄膜 .扫描电子显微镜 (SEM)照片显示 :薄膜表面呈针状晶粒状 ,而且薄膜表面光滑、致密 ,均匀性好 .测试结果表明 :氧化钒薄膜的方块电阻和电阻温度系数 (TCR)在 2 0℃分别为 5 0KΩ和 - 0 .0 2 1K-1.
Polycrystalline Vanadium Oxides thin films deposited on Si(110) and quartz substrates for thermo-sensitive material of uncooled IR detector arrays were fabricated by ion beam sputtering deposition and oxide process. SEM photography indicates that VOx thin films with acerose crystal constructor are smooth, compact and uniform. The test result shows that the square resistance and the temperature coefficient of resistance(TCR) of theVO(x) thin film are 50KOmega and -0.021K(-1) at 20degreesC, respectively.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
2004年第1期64-66,共3页
Journal of Infrared and Millimeter Waves
基金
国家自然科学基金资助项目 ( 60 10 60 0 3 )
