摘要
利用我们自己开发的新型分子电子材料的光致变色性能可制成可擦写的光盘,它的特点是可用任意波长的激光写入,用热、电或光擦除。已经做到Ag_(1-β)(TCNQ)的写擦循环次数N>1000,反差系数K>50%。利用它的电开关性能则预计可在cm^2的基片上用“5μm平面工艺”制成两种1兆位(MB)存贮器。第一种称为“金属有机存贮器(OMM)”,是全固态的电擦除可编程只读存贮器(E^2 PROM),可做在硅片上并与硅器件兼容;另一种称为“可擦式存取存贮管(EAST)”,是一个特殊的电子管,可用作随机存取存贮器(RAM),用电子束进行信息的写入、读出、擦除。这两种存贮器的存贮密度都可接近于光盘存贮器而存取时间相当于半导体存贮器。它们都不用半导体单晶,没有p-n结;器件面积小、工艺简单。可以认为是分子电子学方面真正有实用价值的一些工作的开端。
A new category of erasable information storage media,M_(1-β) (TCNQ) films, is described. The photochromatic effect of this orgaometallic charge-transfer complex can give high-cotracst patterns directly produced on a finegrain film by pulsed photon beams generated from a gas or semiconductor laser. The patterns are erasable by the same light source under different irradiation condition. For Ag_(1-β)(TCNQ) ,number of write-erase cycles N>1000 has been obtained with a coefficient of contrast K>50%.Moreover ,the non-linear Ⅰ-Ⅴ characteristics of the fine-grain M_(1-β)(TCNQ) film can be used as a bistable electric switching. An organometallic memory (OMM) with a storage density of 1 MB/cm^2 can be proposed by using conventional 5μm photoetching technology and is compatible with silicon IC chips.To avoid the tedious decoder,an electron-beam operated 'erasable access storage tube (EAST) 'was designed. The structure is similar to a vidicon but the target is a multilayered fiLm with M_(1-β)(TCNQ) as the active media. Its storage density can approach to that of a laser disc and the access time is as short as a semiconductor memory. Since no single crystal or p-n junction is needed, the technology is relatively simple and lower price per bit of memory can be expected.
出处
《真空科学与技术》
CSCD
1992年第1期9-18,共10页
Vacuum Science and Technology
