摘要
在类似于光导摄像管的真空器件中，用Ag1－β（TCNQ）薄膜置换光敏靶，原则上可以做成用电子束写入和读出的高密度存贮器，它的寻址可以用磁偏转或静电偏转系统。本文用实验方法确定了电子束的写入条件，进一步证明这种设想的合理性和可行性。
A vacuum electron device,similar to a vidicon but the photosensitive target is replaced by an Ag1-β(TCNQ) film,was expected to be used as a high-density memory having the performances of 'write-in'and 'read-out'by electron bombardment. The addressing can be realized by a magnetic or electrostatic deflection system. In this paper the'write-in 'conditions of the electron beam used have been determined by experimental methods. The original consideration was further proved to be reasonable and practicable.
出处
《真空科学与技术》
CSCD
1994年第5期317-319,共3页
Vacuum Science and Technology
