摘要
利用STM隧道电流焦耳热诱导分解气化的热化学烧孔方法，对两种存储材料DEA(TCNQ)_2和TEA(TCNQ)_2的存储性能作了比较,DEA(TCNQ)_2可以得到更高的存储密度、更大的信息孔深/孔径比,有更大的写入阈值电压.由此说明通过对存储材料的设计可以对存储系统的性能进行优化.
The thermochemical hole burning properties of two different charge transfer complexes, DEA (TCNQ)(2) and TEA (TCNQ)(2), were studied in this work. It shows that the data writing on DEA (TCNQ) 2 needs a larger threshold voltage compared with TEA (TCNQ) 2, and that the DEA (TCNQ) 2 gives a smaller hole size and a higher depth/diameter ratio, demonstrating the possibility of optimizing the storage performance with a suitable molecular design.
出处
《物理化学学报》
SCIE
CAS
CSCD
北大核心
2001年第9期769-772,共4页
Acta Physico-Chimica Sinica
基金
国家自然科学基金重大项目(6989022)
国家自然科学基金(29973001)联合资助项目(59910161982)
国家杰出青年科学基金(59425006)资助项
