摘要
研究了氧化热处理对SrTiO3基环形压敏电阻电性能的影响.实验结果表明,压敏电压(V1mA)、电压指数(-)和表观电阻率(-)随温度(600～ 1 100℃)、时间、氧压的增加而上升;电容量(C)、介质损耗(tg-)随之增加而减少;反之,则相反.由复阻抗测试和扩散机制分析认为:氧化热处理的扩散过程主要发生在晶界,电性能的变化决定于晶界扩散和晶界缺陷行为.
The effect of different process of oxidizing-heat-treatment on the properties of SrTiO3-based ring varistor is investigated. The results show that varistor voltage (V1mA), nonlinear coefficient (a) and apparent resistance (r) increases but capacitance and dissipation factor decrease when temperature (600 C to 1 100 C), time and the oxygen pressure increase. According to compound impedance tests and diffusion mechanism analysis, the diffusion process of the oxidizing-heat-treatment mainly occurs in the crystal boundary and the changes of the electrical properties depend on the diffusion and the behaviors of the crystal boundary defects.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2004年第1期32-34,共3页
Electronic Components And Materials
基金
广东省科委"十五"重大科技专项项目(2002A1060304)
关键词
钛酸锶基瓷
氧化热处理
晶界缺陷行为
SrTiO3-based ceramics
oxidizing-heat-treatment
boundary defects
