摘要
在热丝化学气相沉积金刚石系统中 ,通过双灯丝间的热阴极放电产生等离子体 ,对衬底施加正负偏压形成电子促进 ,比较分析了它们及其组合的各种辅助方法对金刚石生长速率的影响。结果表明 ,在以丙酮为碳源、灯丝总功率不变的情况下 ,等离子体可明显增强金刚石的生长 ,其生长速率约为纯热丝法的三倍 ;而正偏压对等离子体辅助沉积金刚石不仅没有增强形核作用 ,而且抑制金刚石的生长 ;电子促进法可以显著提高金刚石的成核密度 ,但并不能提高金刚石生长速率。
Diamond polycrystalline spheres were synthesized by hot filaments chemical vapour deposition. And five assistant methods were fitted together with plasma and electron enhancing. Plasma was generated by hot cathode discharge between two parallel hot filaments. Electron enhancing was formed when positive or negative bias was applied to the substrate. Effects of these assistant methods on growth rate of diamond were compared and analyzed in detail. It is shown that growth rate of diamond by plasma enhancing is about three times than that of conventional hot filament CVD. However, both nucleation and growth rate of diamond do not benefit from plasma enhancing with positive biasing. Biasing can enhance nucleation remarkably, but there is no dominance in growth rate of diamond.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2003年第4期393-397,共5页
Journal of Synthetic Crystals
