摘要
本文采用多排热丝化学气相沉积法在涂巴基管的硅基底上沉积金刚石膜，研究了金刚石膜的生长面积和质量均匀性。实验结果表明，随着热丝数量增加，金刚石膜的面积增加；随着丝底距增加和真空度提高，金刚石膜的质量均匀性提高。利用多排热丝和间歇转动工作台，在涂巴基管的单晶硅基底上沉积出了３０×６０ｍｍ、质量均匀的金刚石薄膜。扫描电镜和拉曼光谱检测确认了这一结果。
The diamond films with large area were grown on the buckytube coated silicon substrate by vsing hot filament chemical vapor deposition technique.The influences of several deposition parameters on the area and homogenity of the diamond films were studied.30×60mm in area diamond film was deposited,through using five rows of filaments and turning intermittently holder.The properties of the diamond films were examined by using scanning electron microscope and Raman spectroscoe.
出处
《人工晶体学报》
EI
CAS
CSCD
1996年第4期324-329,共6页
Journal of Synthetic Crystals
