摘要
制作低压ZnO压敏电阻的一般方法是掺入TiO2作为晶粒助长剂.TiO2的加入可降低压敏电压和非线性系数,增加漏流,这是由于晶粒发育不均所至.而掺入纳米TiO2的ZnO压敏电阻晶粒生长较为均匀,非线性系数和静电容量增大,烧结温度下降.
The ZnO used for fabricating low_voltage ZnO varistor is usually doped with TiO2 as a grain growth promoter. However, the addition of TiO2 can usually lower both the threshold voltage and the coefficient of non-linearity, as well as increase the leakage current of the varistor, due to the inhomogeneous grain growth of ZnO. It is found that the ZnO varistor doped with nano-sized TiO2 exhibits an increased coefficient of non_linearity, an enhanced static capacitance, and a lowered sintering temperature, owing to the homogeneous grain growth of ZnO caused by the addition of the nano-sized TiO2.
出处
《南方金属》
CAS
2003年第2期20-22,42,共4页
Southern Metals
