摘要
近年来,加入晶粒助长剂TiO2以实现低压化的低压ZnO压敏电阻发展迅速。实验所用配方为掺杂TiO2的98.3%ZnO0.7%Bi2O31.0%TiO2(摩尔分数)和相应无TiO2掺杂的配方,在900～1200℃下烧结制备样品。给出了相分析、半定量分析及电性能测试结果。发现TiO2可以有效促进ZnO晶粒长大,降低压敏电压梯度。1100℃下,TiO2掺杂试样的平均晶粒尺寸为56.4μm,远大于无TiO2掺杂的31.8μm。大部分TiO2首先与Bi2O3反应生成Bi4(TiO4)3液相,这大大促进了ZnO晶粒生长。高于1000℃时Bi4(TiO4)3分解,分解出的TiO2与ZnO发生反应,生成Zn2TiO4尖晶石相,晶粒生长受阻,直至停止。
In recent years, the low-voltage ZnO varistor was rapidly developed by additive of TiO2 to promote grain growth. 98.3%ZnO-0.7% Bi2O3 samples without and with 1.0% (in mole) TiO2 additive were prepared by sintering at 900-1200°C. The phase analysis, half-quantitative analysis and measuring of electric characteristics of the samples were performed. The results show that TiO2 addition effectively increases ZnO grain size, and decreases the breakdown voltage gradient. The average grain size of the ZnO sample sintered at 1100°C with TiO2 additive is 56.4 μm, much more larger than 31.8 μm for the sample without TiO2 additive. During the sintering, most part of TiO2 reacts firstly with Bi2O3 to form Bi4(TiO4)3 liquid phase, which greatly promotes the grain growth of ZnO. Then Bi4(TiO4)3 is decomposed to create TiO2 at >1000°C, that reacts with ZnO to form Zn2TiO4 to restrain ZnO grain growth.
出处
《硅酸盐学报》
EI
CAS
CSCD
北大核心
2004年第9期1161-1164,共4页
Journal of The Chinese Ceramic Society
关键词
氧化锌
压敏电阻
氧化钛掺杂
晶粒长大
低压化
Doping (additives)
Grain growth
Grain size and shape
Titanium dioxide
Varistors
