摘要
提出了一种研制低压大通流压敏陶瓷材料的方法。根据已有的微观结构和导电机理的理论，着重研究了添加剂ＴｉＯ２对器件性能的影响，对得到的结果进行了分析和讨论。认为在六元配方基础上，加入适量的ＴｉＯ２和Ｈ３ＢＯ３并对器件进行热处理。
A method for developing high current & low breakdown voltage ZnO Varistors is presen ted. The effect of TiO 2 doping on the properties of ZnO varistor is studied on the basis of the theory of microstructure and conductive mechanism. It is concluded that better properties can be acquired by doping TiO 2 and H 3BO 3 and thermal treating based on the original composition.
出处
《电子元件与材料》
CAS
CSCD
1997年第3期27-30,共4页
Electronic Components And Materials
关键词
氧化锌
压敏电阻器
压敏陶瓷材料
ZnO Varistors, TiO 2 additive, breakdown voltage, current capacity
