摘要
采用电容耦合法测量了Ge_xSi_(1-x)/Si应变层超晶格在不同温度下的光伏特性.在Ⅱ型能带排列的样品中观测到价带-导带子带和价带子带-导带光跃迁的4个峰.对所有样品测得的光伏截止波长都比理论预期值小.还对光电压随温度的变化作了初步解释.
The photovoltaic characteristics of Ge_xSi_(1-x)/Si strained-layer superlattices atdifferent temperatures have been measured by the capacitor coupling method. Four peakscorresponding to optical transitions from the valence band to electron subbands and fromhole subbands to the conduction band have been observed in the samples with type-Ⅱband alignments. The cut-off wavelengths of photovoltaic measurements are shorter thanthose of theoretical calculations for all the samples. The variation of photovoltage withtemperature has been explained preliminarily in the paper.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
1992年第2期134-138,共5页
Journal of Infrared and Millimeter Waves
基金
复旦大学应用表面物理国家实验室资助
关键词
光伏效应
半导体
应变层超晶格
photovoltaic effect, strained-layer superlattices, interband optical transitions
