摘要
描述了 Ge_xSi_(1-x)/Si 异质结长波长红外探测器的基本工作原理及结构,并结合器件介绍了实现异质结生长的各种工艺,如 MBE,CVD 等。
The principle of operation and structure of Ge_xSi_(1-x)/Si hetero- junction long-wavelength infrared detectors are described in this paper.Te- chnologies for device fabrication and heterojunction growth are presented such as MBE and CVD,etc.
出处
《半导体光电》
CAS
CSCD
北大核心
1993年第1期7-12,24,共7页
Semiconductor Optoelectronics
