摘要
本文用X射线双晶衍射技术对分子束外延生长的Ge_xSi(1-x)/Si应变超晶格的结构参数进行研究,分别采用X射线运动学理论和动力学理论对超晶格的双晶摆动曲线进行计算模拟,得出超晶格的全部结构参数;并对这两种理论计算模拟的结果进行比较,发现这两种理论计算的结果基本一致,只是在细微结构上略有差别,对高完整Ge_xSi(1-x)/Si超晶格,用动力学理论计算的曲线更接近于实验曲线。
In this paper, the analysis of Ge_xSi1-x/Si strained layer superlattice grown by MBE is made by means of X-ray double crystal diffraction. The structure parameters of Ge_xSi1-x/Sisuperlattice is obtained from the simulation of rocking curve based on X-ray kinematical and dynamical diffraction theory respectively. The results calculated with these two theories is almost the same, there is a little difference only in the fine structure of rocking curve. For the high quality Ge_xSi1-x/Si superlattice, the rocking cu rve calculated with X-ray dynamical theory is more close to the experimental curve than that with X-ray kinematical theory.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1991年第3期441-448,共8页
Acta Physica Sinica
基金
中国科学院上海冶金研究所青年科学基金
