摘要
根据所建立的半绝缘 (SI)GaAs的禁带宽度EgΓ 公式 ,利用表面光伏 (SPV)方法的测量结果 ,计算了室温下 5种样品的EgΓ 值 ,并对其中之一进行了 2 1- 30 0K温度范围的EgΓ 计算 ,确认了SPV方法对研究SI -GaAs禁带宽度的可行性 .
According to the gotten formula of the energy gaps(E gΓ ) of the semi-insulating(SI) GaAs, and using the measured result by the surface photovoltage method, the energy gaps of five kinds of sample in 300?K are computed. In addition, the E gΓ of one of the samples from 21 to 300?K are computed, it is pointed out that the SPV method is a effective one for studying the energy gap of SI-GaAs.
出处
《福州大学学报（自然科学版）》
CAS
CSCD
2003年第2期144-146,共3页
Journal of Fuzhou University(Natural Science Edition)
基金
福建省教育厅科研资助项目 (JB0 10 16 )
