摘要
本文应用等光强方法,在0.75μm至带边的波段内对无掺杂的n型InP单晶(n_0=2×10^(16)cm^(-3))分别测量了298K、77.4K、50K、20K、13.7K下的光伏谱。在微机上完成拟合计算,确定了各有关参数在上述各温度下的各自不同数值,得出它们各自随温度变化的大体规律。进而提出了双施主-深陷阱模型,计算了双施主的能级位置和密度,说明了n_0～T的依从关系,并应用此模型,半定量地讨论了材料的寿命行为,从而探讨了复合机理。对S_p～T关系也作了定性讨论。
The photovoltaic spectra of undoped n type InP single crystal (n=2×10^(16)cm^(-3))are measuredby equi-photon number method in the wavelength ranging from 0.75μm to band edge attemperatures of 298K, 77.4K, 50K, 20K, 13.7K. The values of the material parameters at differenttemperatures are determined by fitting calculations using a microcomputer. The temperaturedependence of the parameters are obtained.A double donor-deep trap model is presented.The position and density of levels of the double donor are calculated, then the temperaturedependence of n is explained.Furthermore,the lifetime of minority carriers thereby therecombination mechanism is discussed using this model.In addition, the relationship S～T isalso discussed.
基金
国家科学基金
关键词
INP单晶
低温
光伏谱
半导体材料
InP single crystal
Photovoltaie spectra at Low temperatures
Mechanism of characters
Double donor-deep trap model
