摘要
测量以GaAs为衬底的Zn1-xCdxSe/ZnSe应变层多量子阱在不同温度下(18～300K)的光伏谱,研究Zn1-xCdxSe/ZnSe多量子阱的光伏效应和带间激子跃迁.实验结果表明,Zn1-xCdxSe/ZnSe量子阱具有显著的量子限制效应,从18 K直至室温,都能观测到清晰的激子跃迁峰,说明Zn1-xCdxSe/ZnSe是制作室温下工作的蓝绿激光器等发光器件的合适材料.
The photovohage spectra of Zn1-xCdxSe/ZnSe multiple quantum wells on GaAs substrates at temperatures from 18K to 300K were measured. The photovohaic effects and exciton transitions of Zn1-xCdxSe/ZnSe multiple quantum wells were studied. The experimental results show that there is marked quantum confined effect in Zn1-xCdxSe/ZnSe quantum well and the exciton transitions can be observed from 18 K to room temperature,which indicates that Zn1-xCdxSe/ZnSe quantum well could be a kind of suitable materials for bluegreen photonic devices.
出处
《上海理工大学学报》
EI
CAS
北大核心
2005年第4期309-311,共3页
Journal of University of Shanghai For Science and Technology
基金
福建省高等学校科技基金资助重点项目(JA03128)
关键词
量子阱
光伏谱
激子跃迁
quantum well
photovoltaic spectrum
exciton transition
