摘要
本文研究单晶硅掺金前后的表面光伏和红外吸收谱,证实在相同表面状况下,红外吸收谱的基线与少子扩散长度的对应关系;由半导体统计,推导出简并因子不等于1时扩金硅的统计公式,以及金受主简并因子gAu,≠1,金施主简并因子gAu,d≠1硅双重能级复合理论公式,由此计算的少子寿命值与测量值之比在1.64—0.745之间。
In this paper infra-red absorption spectra and surface photovoltaic spectra of An-doped and undoped silicon are studied. The relation of minority carrier diffusion length to the height of base line of infra-red absorption spectra under the same surface condition is determined. By using semiconductor statistics, we obtain the Au-doped silicon semicondutor statistics formulae when the degeneracy factor is different from unit, as well as silicon two-levels recombination theory formulae when gAu,a≠1 and gAn,d ≠ 1 The ratios of the ca-culated lifetime of minority carrier to the experimental data are between 1.64 and 0.745.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
1992年第3期491-499,共9页
Acta Physica Sinica
基金
国家自然科学基金
