摘要
用透射电子显微镜、扫描电镜对锑化镓材料切、磨、抛等加工工艺引入的表面损伤进行观察和检测。结果表明 :切割加工是锑化镓单晶晶片表面损伤层引入的主要工序 ;锑化镓单晶切割片表面极不平整 ,有金刚砂所引起的较粗桔皮皱纹 ;其表面损伤层深度≤ 3 0 μm ;双面研磨的锑化镓晶片表面仍有较粗桔皮皱纹 ,但比切割片的要细 ,而且桔皮皱纹的深浅随磨砂 (Al2 O3)粒径的减小而变细变浅 ;晶片的表面损伤层深度 (≤ 5 μm)也随着磨砂粒径的减小而减小。一般情况下 ,其损伤层的深度约为磨砂粒径的 1 2。机械化学抛光加工的锑化镓晶片表面的SEM像观察不到桔皮皱纹 ;其损伤层深度约 5 5nm。
The damaged layer introduced in surface processing on the face of GaSb wafer was observed and determined by SEM and TEM. The results show as follows: The surfaces of slicing wafers are not even and there are a lot of wrinkles created by silicon carbide, and the thickness of the damaged layers is less than 30 μm. There are also a lot of wrinkles created by abrasive particles(Al 2O 3) on the surface of double lapped GaSb wafers, the wrinkles are thinner than those created by slicing, and the smaller the diameter of the abresive particles is, the finer the wrinkles, and the thickness of the damage layers is less than 5 μm, about half of the diameter abrasive particles. While there are no wrinkles on the surface of chemical mechanical polished wafers, and the thickness of the damage layers is less than 55 nm.
出处
《稀有金属》
EI
CAS
CSCD
北大核心
2003年第2期299-302,313,共5页
Chinese Journal of Rare Metals
关键词
锑化镓
切片
磨片
抛光
损伤层
GaSb
slicing
lapping
polishing
damaged layer
