摘要
制备高质量锑化铟(InSb)单晶是发展大规模红外焦平面器件以及新型高温红外探测器衬底材料的关键。而在用直拉法生长InSb的过程中,表面杂质的出现会严重影响成品率。利用X射线光电子能谱(X-ray Photoelectron Spectroscopy, XPS)技术研究了生产中InSb晶体表面杂质膜层的成分,分析了其主要来源及造成的影响,并采取相应工艺措施进行了改进。结果表明,InSb晶体表面杂质膜层的主要成分为In2O3、Sb2O3和Sb2O5三者的混合物以及碳沾污,其厚度不超过40 nm。通过对单晶炉处理和保护气氛的工艺优化,表面杂质大大减少,为获得高质量晶体奠定了基础。
The preparation of high-quality indium antimonide(InSb) single crystal is the key to the development of large-format infrared focal plane devices and new substrate materials for high-temperature infrared detectors. However, in the process of growing InSb by the Czochralski method, the appearance of surface impurities will seriously affect the yield. The X-ray photoelectron spectroscopy(XPS) technology is used to study the composition of the impurity layer on the surface of InSb crystals in production, the main sources and their effects are analyzed, and corresponding process measures are adopted to improve them. The results show that the main components of the impurity layer on the surface of InSb crystals are a mixture of In2O3, Sb2O3 and Sb2O5 as well as carbon contamination, the thickness of which is not more than 40 nm. By optimizing the processing of the single crystal furnace treatment and the protective atmosphere, the surface impurities are greatly reduced, laying the foundation for obtaining high-quality crystals.
作者
董涛
张孟川
程波
赵超
DONG Tao;ZHANG Meng-chuan;CHENG Bo;ZHAO Chao(The 11th Research Institute of China Electronics Technology Group Corporation,Beijing 100015,China)
出处
《红外》
CAS
2019年第10期8-13,共6页
Infrared
关键词
直拉法
锑化铟
杂质
成分
Czochralski method
InSb
impurity
composition
