摘要
用透射电镜、扫描电镜对ＧａＡｓ材料加工工艺中的表面损伤层进行了观察和检测。结果切片损伤层深度≤５０μｍ、双面研磨损伤层深度≤１５μｍ、机械化学抛光损伤层深度（腐蚀前）＜１．２μｍ。分析了损伤结构及其引入的因素。
The damage layer caused in processing on the surface of GaAs wafer was observed and determined by TEM and SEM. The results show that the thickness of the damage layer on sliced, lapped and polished wafers are ≤50 μm, ≤15 μm and ≤1.2 μm respectively. The structure and the caused mechanism of the damage layer on GaAs wafer were studied.
出处
《稀有金属》
EI
CAS
CSCD
北大核心
1998年第5期392-395,共4页
Chinese Journal of Rare Metals
