摘要
在铁电不挥发存储器 (FERAM)技术中 ,集成铁电电容的制备是关键工艺之一。文中提出一种制备集成铁电电容的改进工艺 :采用 lift-off技术在衬底样品表面淀积铁电电容 Pt/Ti下电极 ,然后用 Sol-Gel方法制备 PZT薄膜。在 PZT薄膜未析晶前 ,先将它加工成电容图形 ,再高温退火成为 PZT铁电薄膜。最后完成铁电电容 Pt上电极。与传统工艺相比 ,改进后的工艺能保持 PZT铁电薄膜与金属上电极之间良好的接触界面。测试结果表明 ,工艺条件的变动不会影响 PZT铁电薄膜的成膜和结构 ,从而可得到性能优良的铁电电容。
For fabricating the nonvolatile ferroelectric memories (FERAM), one of the keys is to make the integrated ferroelectric capacitors. This paper presents an improved technology for fabricating the integrated ferroelectric thin film capacitor. The Pt/Ti bottom electrodes were made on the substrate surface by lift-off technology. Then the PZT film was formed on the bottom electrode by Sol-Gel method. PZT film was patterned before crystallization. After PZT film was crystallized through high temperature annealing, the top metal electrodes were made on PZT ferroelectric thin film. Comparing with the the normal process, the improved technology can keep the good contact interface between PZT film and the top electrode. The measurement results showed that the alteration of the fabrication process does not affect the film formation and the structure of PZT ferroelectric film. The integrated PZT thin film capacitors with high quality could be obtained successfully.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2003年第1期112-115,共4页
Research & Progress of SSE
基金
国家自然科学基金项目 (编号 698760 0 8)
应用材料 (AM)基金项目资助
