摘要
为制备Ａ１／ＰＺＴ／Ｐｔ／Ｔｉ电容，研究了采用ＳＦ６／Ａｒ等离子体对Ｐｂ（Ｚｒ，Ｔｉ）Ｏ３及Ｐｔ／Ｔｉ底电极进行反应离子刻蚀（ＲＩＥ）的技术．较系统地研究了ＲＦ功率，ＳＦ６／Ａｒ流量比及气压对刻蚀速率的影响，找到了对ＰＺＴ及Ｔｉ进行ＲＩＥ的优化工艺条件．在不同的条件下得到对ＰＺＴ的刻蚀速率为２～７ｎｍ／ｍｉｎ；采用纯Ａｒ气体时Ｐｔ的刻蚀速率为２～６ｎｍ／ｍｉｎ；
Abstract To obtain a Al/PZT/Pt/Ti ferroelectric capacitor, Reactive Ion
Etching (RIE) of Pb(Zr, Ti)O 3 ferroelectric thin film and Pt bottom electrode with SF 6/Ar
plasmas is processed in this work. Authors did many experiments to study the etch rate for PZT
and Pt under different RF power, SF 6/Ar gas flow ratio and gas pressure. It’s shown that
there exists an optimum power, SF 6/Ar gas flow ratio and pressure to etch PZT and Pt,
respectively. Etch rates of the order of 2～7nm/min for PZT are obtained under different
conditions. For Pt electrode, etch rates of the order of 2￣6nm/min are obtained when pure Ar is
used as etch gas. In the case of Ti layer, it could be etched by HCl and H 2O 2 solution easily.
基金
国家自然科学基金
上海市应用物理中心
AM公司基金
"863"项目资助
