摘要
制备MFIS存储器的铁电薄膜一般选用抗疲劳特性好的SBT铁电薄膜,介质层一般选用ZrO2作为阻挡层,以克服电荷注入效应,改进器件的性能。在MFIS的研制中,SBT薄膜和ZrO2薄膜的刻蚀是关键工艺之一。研究了用SF6和Ar作为反应气体刻蚀SBT及ZrO2薄膜的方法,对不同条件下SBT和ZrO2的刻蚀速率进行了实验研究和讨论、分析,得到了刻蚀SBT及ZrO2的优化工艺条件。
In order to improve the performance of the metal ferroelectric insulator semiconductor(MFIS)device, SBT ferroelectric films with good anti fatigue property is used, and ZrO 2 film is employed as the buffer layer to overcome the charge injection effect. The method of reactive ion etching of SBT and ZrO 2 by using SF 6 and Ar as reactive gas is investigated in the paper. The relationship between etching rates and etching conditions is examined through experiment. Optimal process conditions for SBT and ZrO 2 etching have been obtained.
出处
《微电子学》
CAS
CSCD
北大核心
2000年第1期8-10,共3页
Microelectronics
基金
国家自然科学基金! ( 698760 0 8)
AM基金
"863"资助项目
