摘要
分析表明,产品A在量产过程中,于N型源漏注入(NSD,N-type Source、Drain)光刻工艺环节持续出现放射状图形异常缺陷,且发生率高达2.2%。此缺陷可能影响后续离子注入工艺,存在导致良率损失甚至产品报废的风险。通过专项实验设计,我们深入研究了晶圆表面预处理O_(2) treatment工艺与该缺陷的形成机理,并成功开发出有效的解决方案。该方案不仅显著降低了产品A量产中的放射状图形缺陷发生率,有效规避了相关的良率损失与报废风险,同时也降低了制造成本。
Analysis indicates that during the mass production of Product A,spin line map pattern defects have been continuously occurring in the N-type Source/Drain(NSD)lithography process,with an occurrence rate reaching 2.2%.This defect has the potential to impact subsequent ion implantation processes,posing a risk of yield loss and even product scrap.Through dedicated experimental design,we conducted an in-depth investigation into the formation mechanism between the wafer surface pretreatment(O_(2) treatment)process and this defect,successfully developing an effective solution.This solution has not only significantly reduced the occurrence rate of radial pattern defects in the mass production of Product A,effectively mitigating the associated risks of yield loss and scrap,but has also lowered manufacturing costs.
作者
熊溪
赵山岭
XIONG Xi;ZHAO Shan-ling(Runpeng Semiconductor(Shenzhen)Co.,Ltd)
出处
《中国集成电路》
2025年第11期58-64,共7页
China lntegrated Circuit
关键词
NSD
光刻
放射状图形缺陷
表面预处理
良率损失
NSD
lithography
spin line map pattern defect
surface pretreatment
yield loss
